Document Details

Document Type : Article In Journal 
Document Title :
Growth and Electrical Characterization of TlInTe2 Single Crystal
إنماء ودراسة الخواص الكهربائية لبلورة TlInTe2 أحـادية الطور
 
Subject : Growth and Electrical Characterization of TlInTe2 Single Crystal 
Document Language : English 
Abstract : High efficiency design for single crystal growth from melt based on Bridgman technique is constructed locally and used for growing TlInTe2 crystals. Measurements of Hall coefficient and DC electrical conductivity covering a temperature range from 158 to 473 K were conducted. The investigated samples have P-Type conductivity with RH of 2.3 × 109 cm3/coul. at room temperature and carrier concentrations as 2.81×109 cm-3. Energy gap ?Eg and ionization energy ?Ea were estimated as 0.72 eV and 0.113 eV, respectively. The diffusion coefficient, diffusion length, as well as relaxation time were evaluated, and the scattering mechanism of charge carrier was checked. 
ISSN : 1012-1319 
Journal Name : Science Journal 
Volume : 20 
Issue Number : 2 
Publishing Year : 1429 AH
2008 AD 
Article Type : Article 
Added Date : Sunday, September 29, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
نجاة توفيقTawfeeg, Najat Researcher  
فاطمة باهبريBahabri, Fatmah Researcher  
مصطفى مباركMubarak, Mostafa Researcher  
سهام الحربيAlharbi, Seham Researcher  
أحمد الغامديAlgamdi, Ahmed Researcher  
فرج الحازميAlhazmi, Faraj Researcher  
صالح الحنيطيAlheniti, Saleh Researcher  

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